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Filtros : "Rússia" "K. N. Toosi University of Technology - Tehran - Iran" Limpar

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Artigo de periodico
XPS study of long-term passivation of GaAs surfaces using saturated ammonium sulfide solution under optimum condition (2021)
Mahmoodnia, Hedieh; Salehi, Alireza; Mastelaro, Valmor Roberto
Source: Russian Journal of Electrochemistry. Unidade: IFSC
Subjects: SEMICONDUTORES, MATERIAIS, ESPECTROSCOPIA DE RAIO X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAHMOODNIA, Hedieh e SALEHI, Alireza e MASTELARO, Valmor Roberto. XPS study of long-term passivation of GaAs surfaces using saturated ammonium sulfide solution under optimum condition. Russian Journal of Electrochemistry, v. 57, n. 5, p. 471-477, 2021Tradução . . Disponível em: https://doi.org/10.1134/S1023193521050104. Acesso em: 14 maio 2024.
APA
Mahmoodnia, H., Salehi, A., & Mastelaro, V. R. (2021). XPS study of long-term passivation of GaAs surfaces using saturated ammonium sulfide solution under optimum condition. Russian Journal of Electrochemistry, 57( 5), 471-477. doi:10.1134/S1023193521050104
NLM
Mahmoodnia H, Salehi A, Mastelaro VR. XPS study of long-term passivation of GaAs surfaces using saturated ammonium sulfide solution under optimum condition [Internet]. Russian Journal of Electrochemistry. 2021 ; 57( 5): 471-477.[citado 2024 maio 14 ] Available from: https://doi.org/10.1134/S1023193521050104
Vancouver
Mahmoodnia H, Salehi A, Mastelaro VR. XPS study of long-term passivation of GaAs surfaces using saturated ammonium sulfide solution under optimum condition [Internet]. Russian Journal of Electrochemistry. 2021 ; 57( 5): 471-477.[citado 2024 maio 14 ] Available from: https://doi.org/10.1134/S1023193521050104
Artigo de periodico
GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements (2020)
Mahmoodnia, H.; Salehi, A.; Mastelaro, Valmor Roberto
Source: Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, MATERIAIS, ESPECTROSCOPIA DE RAIO X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAHMOODNIA, H. e SALEHI, A. e MASTELARO, Valmor Roberto. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements. Semiconductors, v. 54, n. 7, p. 817-826, 2020Tradução . . Disponível em: https://doi.org/10.1134/S106378262007009X. Acesso em: 14 maio 2024.
APA
Mahmoodnia, H., Salehi, A., & Mastelaro, V. R. (2020). GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements. Semiconductors, 54( 7), 817-826. doi:10.1134/S106378262007009X
NLM
Mahmoodnia H, Salehi A, Mastelaro VR. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements [Internet]. Semiconductors. 2020 ; 54( 7): 817-826.[citado 2024 maio 14 ] Available from: https://doi.org/10.1134/S106378262007009X
Vancouver
Mahmoodnia H, Salehi A, Mastelaro VR. GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements [Internet]. Semiconductors. 2020 ; 54( 7): 817-826.[citado 2024 maio 14 ] Available from: https://doi.org/10.1134/S106378262007009X

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